DIODES INC FZT853 Bipolar (BJT) Single Transistor, NPN, 100 V, 130 MHz, 3 W, 6 A, 200 hFE Sigma 302963 Inductance Tolerance � 20% RMS

Inductance Tolerance � 20% RMS Current (Irms) 1

Object Based Motion Detection Object based motion detection allows you to specify what type of motion will trigger predefined events

Interior: Aluminum frame reinforced with polyethylene Type of Closure Zippered Interior Dimensions 12

45 cm Weight 2

Brand SCHAFFNER Part Number RN202-2-02-1M1 Quantity Each Technical Data Sheet EN

DIODES INC FZT853 Bipolar (BJT) Single Transistor, NPN, 100 V, 130 MHz, 3 W, 6 A, 200 hFE Sigma 302963 Inductance Tolerance � 20% RMSThe FZT853 is a 100V NPN Complementary Medium Power High Current Transistor with matte tin plated leads solderable as per MIL STD 202 standard, method 208. High continuous collector current Low saturation voltages hFE specified up to 10A for a high gain hold up Complementary PNP type FZT953 AEC Q101 qualified UL94V 0 Flammability rating Applications Automotive, Aerospace, Defence, Military Warnings ESD sensitive device, take proper precaution while